參數(shù)資料
型號: RD28F1604C3T90
廠商: INTEL CORP
元件分類: 存儲器
英文描述: 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù): 24/70頁
文件大?。?/td> 1223K
代理商: RD28F1604C3T90
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
24
Datasheet
5.0
ElectricalSpecifications
5.1
AbsoluteMaximumRatings
Warning:
Stressingthedevicebeyondthe“AbsoluteMaximumRatings”maycausepermanentdamage.
Thesearestressratingsonly.Operationbeyondthe“OperatingConditions”isnotrecommended
andextendedexposurebeyondthe“OperatingConditions”mayaffectdevicereliability.
NOTICE:
Thisdatasheetcontainsinformationonproductsinfullproduction.Thespecificationsaresubjectto
changewithoutnotice.VerifywithyourlocalIntelSalesofficethatyouhavethelatestdatasheetbeforefinalizinga
design
.
Table9. AbsoluteMaximumRatings
Parameter
MaximumRating
Notes
ExtendedOperatingTemperature
–25°Cto+85°C
DuringRead
DuringFlashBlockEraseandProgram
TemperatureunderBias
StorageTemperature
–65°Cto+125°C
VoltageonAnyBall(exceptF-VCC
/F-VCCQ
/S-VCC
andF-VPP)with
RespecttoGND
–0.5 Vto+3.3 V
1
F-V
PP
Voltage(forBlockEraseandProgram)withRespecttoGND
–0.5Vto+13.5 V
1,2,4
F-V
CC
/F-V
CCQ
/S-V
CC
SupplyVoltagewithRespecttoGND
–0.2Vto+3.3 V
OutputShortCircuitCurrent
100mA
3
NOTES:
1. MinimumDCvoltageis–0.5 Voninput/outputballs.Duringtransitions,thislevelmayundershootto–
2.0 Vforperiods<20 ns.MaximumDCvoltageoninput/outputballsisF-V
CC
/F-V
CCQ
/S-V
CC
+0.5 V
which,duringtransitions,mayovershootto
F-V
CC
/F-V
CCQ
/S-V
CC
+2.0 Vforperiods< 20ns.
2. MaximumDCvoltageonF-V
PP
mayovershootto+14.0 Vforperiods<20ns.
3. F-V
PP
voltageisnormally1.65 V–3.3 V.Connectiontosupplyof11.4 V–12.6 Vcanonlybedonefor
1000cyclesonthemainblocksand2500cyclesontheparameterblocksduringprogram/erase.F-V
PP
maybeconnectedto12 Vforatotalof80hoursmaximum.See
Section4.2.1
fordetails
4. Outputshortedfornomorethanonesecond.
Nomorethanoneoutputshortedatatime.
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