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參數(shù)資料
| 型號(hào)： | RD28F1602C3BD70 |
| 廠商： | INTEL CORP |
| 元件分類： | 存儲(chǔ)器 |
| 英文描述： | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66 |
| 文件頁(yè)數(shù)： | 43/70頁(yè) |
| 文件大小： | 1223K |
| 代理商： | RD28F1602C3BD70 |
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3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
43
7.3
NoiseReduction
Stacked-CSPmemory’spowerswitchingcharacteristicsrequirecarefuldevicedecoupling.System
designersshouldconsiderthreesupplycurrentissuesforboththeflashandSRAM:
1.
Standbycurrentlevels(I
CCS
)
2.
Readcurrentlevels(I
CCR
)
3.
TransientpeaksproducedbyfallingandrisingedgesofF-CE#,S-CS1#,andS-CS2.
Transientcurrentmagnitudesdependonthedeviceoutputs’capacitiveandinductiveloading.Two-
linecontrolandproperdecouplingcapacitorselectionwillsuppressthesetransientvoltagepeaks.
Eachdeviceshouldhaveacapacitorsbetweenindividualpower(F-VCC,F-VCCQ
,
F-VPP
,
S-VCC)andground(GND)signals.High-frequency,inherentlylow-inductancecapacitorsshould
beplacedascloseaspossibletothepackageleads.
Noiseissueswithinasystemcancausedevicestooperateerraticallyifitisnotadequatelyfiltered.
Inordertoavoidanynoiseinteractionissueswithinasystem,itisrecommendedthatthedesign
containtheappropriatenumberofdecouplingcapacitorsinthesystem.Noiseissuescanalsobe
reducedifleadstothedevicearekeptveryshort,inordertoreduceinductance.
DecouplingcapacitorsbetweenV
CC
andV
SS
reducevoltagespikesbysupplyingtheextracurrent
neededduringswitching.Placingthesecapacitorsasclosetothedeviceaspossiblereducesline
inductance.Thecapacitorsshouldbelowinductancecapacitors;surfacemountcapacitorstypically
exhibitlowerinductance.
Itishighlyrecommendedthatsystemsusea0.1
μ
fcapacitorforeachoftheD9,D10,A10andE4
gridballoutlocations(see
Figure1,“66-BallStackedChipScalePackage”onpage 8
forballout).
Thesecapacitorsarenecessarytoavoidundesiredconditionscreatedbyexcessnoise.Smaller
capacitorscanbeusedtodecouplehigherfrequencies.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RD28F1602C3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1602C3T70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1602C3T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1602C3TD70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1604C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
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