參數(shù)資料
型號(hào): RD28F1602C3BD70
廠商: INTEL CORP
元件分類: 存儲(chǔ)器
英文描述: 3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA66
封裝: 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66
文件頁數(shù): 31/70頁
文件大?。?/td> 1223K
代理商: RD28F1602C3BD70
3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
31
5.6
FlashACCharacteristics—WriteOperations
See
Figure4,“Input/OutputReferenceWaveform”onpage 28
fortimingmeasurementsandmaximum
allowableinputslewrate.
See
Figure7,“ACWaveform:FlashProgramandEraseOperations”onpage 33
.
5.7
FlashEraseandProgramTimings
(1)
Table14. FlashACCharacteristics—WriteOperations
#
Sym
Parameter
Density
16-Mbit
32-Mbit
Unit
Product
-70
-90
-110
-70
-90
VoltageRange
2.7V-3.3V
Note
Min
Min
Min
Min
Min
W1
t
PHWL
t
PHEL
F-RP#HighRecoverytoF-WE#(F-CE#)GoingLow
150
150
150
150
150
ns
W2
t
ELWL
t
WLEL
F-CE#(F-WE#)SetuptoF-WE#(F-CE#)GoingLow
0
0
0
0
0
ns
W3
t
ELEH
t
WLWH
F-WE#(F-CE#)PulseWidth
1
45
60
70
45
60
ns
W4
t
DVWH
t
DVEH
DataSetuptoF-WE#(F-CE#)GoingHigh
2
40
50
60
40
40
ns
W5
t
AVWH
t
AVEH
AddressSetuptoF-WE#(F-CE#)GoingHigh
2
50
60
70
50
60
ns
W6
t
WHEH
t
EHWH
F-CE#(F-WE#)HoldTimefromF-WE#(F-CE#)High
0
0
0
0
0
ns
W7
t
WHDX
t
EHDX
DataHoldTimefromF-WE#(F-CE#)High
2
0
0
0
0
0
ns
W8
t
WHAX
t
EHAX
AddressHoldTimefromF-WE#(F-CE#)High
2
0
0
0
0
0
ns
W9
t
WHWL
t
EHEL
F-WE#(F-CE#)PulseWidthHigh
1
25
30
30
25
30
ns
W10
t
VPWH
t
VPEH
F-V
PP
SetuptoF-WE#(F-CE#)GoingHigh
3
200
200
200
200
200
ns
W11
t
QVVL
F-V
PP
HoldfromValidSRD
3
0
0
0
0
0
ns
NOTES:
1. Writepulsewidth(t
)isdefinedfromF-CE#orF-WE#goinglow(whichevergoeslowlast)
toF-CE#or
F-WE#goinghigh(whichevergoeshighfirst).Hence,t
= t
= t
= t
WLEH
= t
ELWH
.Similarly,writepulsewidthhigh
(t
)isdefinedfromF-CE#orF-WE#goinghigh(whichevergoeshighfirst)
F-WE#goinglow(whichevergoeslowfirst).Hence,t
= t
= t
= t
WHEL
= t
EHWL.
2. Referto
Table 5,“FlashMemoryCommandDefinitions”onpage 17
forvalidA
IN
IN
3. Sampled,butnot100%tested.
Table15. FlashEraseandProgramTimings(Sheet1of2)
Symbol
Parameter
F-V
PP
1.65V–3.3V
11.4V–12.6V
Unit
Note
Typ
(1)
Max
Typ
(1)
Max
t
BWPB
t
BWMB
4-KWParameterBlockProgramTime(Word)
2,3
0.10
0.30
0.03
0.12
s
32-KWMainBlockProgramTime(Word)
2,3
0.8
2.4
0.24
1
s
t
WHQV1
/t
EHQV1
0.25μmWordProgramTime
2,3
22
200
8
185
μs
0.13μmand0.18μmWordProgramTime
2,3
12
200
8
185
t
WHQV2
/t
EHQV2
4-KWParameterBlockEraseTime(Word)
2,3
0.5
4
0.4
4
s
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