參數(shù)資料
型號: RD100HHF1
廠商: Mitsubishi Electric Corporation
英文描述: MOS FET type transistor specifically designed for HF High power amplifiers applications.
中文描述: 場效應(yīng)晶體管型晶體管專為高頻高功率放大器的應(yīng)用。
文件頁數(shù): 7/7頁
文件大?。?/td> 179K
代理商: RD100HHF1
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
7/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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