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參數(shù)資料
| 型號： | RD100FM |
| 廠商： | NEC Corp. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 179K |
| 代理商： | RD100FM |
MITSUBISHI RF POWER MOS FET
RD100HHF1
Silicon MOSFET Power Transistor 30MHz,100W
RD100HHF1
MITSUBISHI ELECTRIC
REV.3 8 APRIL. 2004
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD100HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
V
DSS
Drain to source voltage
V
GSS
Gate to source voltage
Pch
Channel dissipation
Pin
Input power
ID
Drain current
Tch
Channel temperature
Tstg
Storage temperature
Rth j-c
Thermal resistance
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
junction to case
RATINGS
50
+/-20
176.5
12.5
25
175
-40 to +175
0.85
UNIT
V
V
W
W
A
°C
°C
°C/W
LIMITS
TYP
-
-
-
110
60
No destroy
UNIT
uA
uA
V
W
%
-
SYMBOL
PARAMETER
CONDITIONS
MIN
-
-
1.5
100
55
MAX.
10
1
4.5
-
-
I
DSS
I
GSS
V
TH
Pout
η
D
Zerogate voltage drain current V
DS
=17V, V
GS
=0V
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=30MHz ,V
DD
=12.5V
Pin=7W, Idq=1.0A
V
DD
=15.2V,Po=100W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
9
3
4-C2
1
R1.6+/-0.15
2
18.5+/-0.3
5.0+/-0.3
3
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
2
4.5+/-0.7
6.2+/-0.7
0.1
+0.05
-0.01
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RD100FM-T1-AZ-B | 制造商:Renesas Electronics Corporation 功能描述: |
| RD100HHF1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MOS FET type transistor specifically designed for HF High power amplifiers applications. |
| RD100HHF1_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Silicon MOSFET Power Transistor 30MHz,100W |
| RD100HHF1_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W |
| RD100M35 | 制造商:Robert G Allen (RGA) 功能描述: |
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