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參數(shù)資料
| 型號(hào)： | RA30H4452M-01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 440-520MHz 30W 12.5V MOBILE RADIO |
| 中文描述： | 440 - 520MHz的功率30W 12.5V移動(dòng)通信 |
| 文件頁(yè)數(shù)： | 8/9頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | RA30H4452M-01 |
MITSUBISHI RF POWER MODULE
R A30H4452M
RA30H4452M
MITSUBISHI ELECTRIC
8/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity following 2 methods are recommended to control the output power:
a) Non-linear FM modulation:
By Gate voltage V
GG
.
When the Gate voltage is close to zero, the RF input signal is attenuated up to 60dB and only a small leakage
current is flowing from the battery into the Drain.
Around V
GG
=3.5V the output power and Drain current increases strongly.
Around V
GG
=4V, latest at V
GG
=5V, the nominal output power becomes available.
b) Linear AM modulation:
By RF input power P
in
.
The Gate voltage is used to set the Drain quiescent current for the required linearity.
Oscillation:
To test RF characteristic this module is put on a fixture with 2 bias decoupling capacitors each on Gate and Drain, a
4.700pF chip capacitor, located close to the module, and a 22μF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module
b) Is the load impedance Z
L
=50
c) Is the source impedance Z
G
=50
Frequent on/off switching:
In Base Stations frequent on/off switching can result in reduced or no output power, when the resin that coats the
transistor chips gets thermally expanded by the on/off switching. The bond wires in the resin will break after long time
thermally induced mechanical stress.
Quality:
MITSUBISHI ELECTRIC cannot take any liability for failures resulting from Base Station operation time or operating
conditions exceeding those in Mobile Radios.
The technology of this module is the result of more than 20 years experience, field proven in several 10 million
Mobile Radios. Today most returned modules show failures as ESD, substrate crack, transistor burn-out, etc which
are caused by handling or operating conditions. Few degradation failures can be found.
Keep safety first in your circuit
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
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| RA30H4452M | 440-520MHz 30W 12.5V MOBILE RADIO |
| RA30H4452M-E01 | 440-520MHz 30W 12.5V MOBILE RADIO |
| RA35H1516M | 154-162MHz 40W 12.5V MOBILE RADIO |
| RA35H1516M-01 | 154-162MHz 40W 12.5V MOBILE RADIO |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA30H4452M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO |
| RA30H4452M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:440-520MHz 30W 12.5V MOBILE RADIO |
| RA30H4552M1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RF MOSFET MODULE 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H4552M1_08 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RF MOSFET MODULE 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H4552M1_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
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