- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374567 > RA35H1516M-01 (Mitsubishi Electric Corporation) 154-162MHz 40W 12.5V MOBILE RADIO PDF資料下載
參數(shù)資料
| 型號(hào)： | RA35H1516M-01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 154-162MHz 40W 12.5V MOBILE RADIO |
| 中文描述： | 154 - 162MHz功率40W 12.5V移動(dòng)通信 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 75K |
| 代理商： | RA35H1516M-01 |
MITSUBISHI RF MOSFET MODULE
R A35H1516M
154-162MHz
40W
12.5V MOBILE RADIO
RA35H1516M
MITSUBISHI ELECTRIC
1/8
15 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA35H1516M is a 40-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 154- to
162-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>40W,
η
T
>50% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA35H1516M-E01
RA35H1516M-01
(Japan - packed without desiccator)
Antistatic tray,
10 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA35H1516M-E01 | 154-162MHz 40W 12.5V MOBILE RADIO |
| RA45H4047M-01 | MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO |
| RA45H4047M | MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO |
| RA45H4047M-E01 | MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO |
| RA506 | 50.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA35H1516M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 154-162MHz 40W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA35H1516M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:154-162MHz 40W 12.5V MOBILE RADIO |
| RA36 | 制造商:M/A-COM Technology Solutions 功能描述:GAIN BLOCK |
| RA-362MS-V7 | 制造商:OKAYA 制造商全稱:OKAYA 功能描述:SURGE ABSORBER |
| RA-362M-V7 | 制造商:OKAYA 制造商全稱:OKAYA 功能描述:SURGE ABSORBER |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。