參數(shù)資料
型號: RA13H4047M-E01
廠商: Mitsubishi Electric Corporation
元件分類: MOSFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N溝道的PowerTrench MOSFET的
文件頁數(shù): 2/9頁
文件大?。?/td> 85K
代理商: RA13H4047M-E01
MITSUBISHI RF POWER MODULE
R A13H4047M
RA13H4047M
MITSUBISHI ELECTRIC
2/9
24 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
V
DD
V
GG
P
in
P
out
T
case(OP)
Operation Case Temperature Range
T
stg
Storage Temperature Range
The above parameters are independently guaranteed.
Drain Voltage
Gate Voltage
Input Power
Output Power
V
GG
<5V
V
DD
<12.5V, P
in
=0mW
17
6
100
20
V
V
mW
W
°C
°C
f=400-470MHz,
Z
G
=Z
L
=50
-30 to +110
-40 to +110
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
Output Power
400
13
470
MHz
W
P
out
η
T
2f
o
ρ
in
I
GG
Total Efficiency
2
nd
Harmonic
40
%
-30
dBc
Input VSWR
3:1
Gate Current
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
1
mA
Stability
V
DD
=10.0-15.2V, P
in
=25-70mW,
P
out
<20W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW, P
out
=13W (V
GG
control),
Load VSWR=20:1
No parasitic oscillation
Load VSWR Tolerance
No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
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