參數(shù)資料
型號(hào): RA18H1213G
廠商: Mitsubishi Electric Corporation
英文描述: 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
中文描述: 1.24 - 1.30GHz 18W 12.5V,3階段制造。對(duì)于移動(dòng)通信
文件頁數(shù): 1/9頁
文件大小: 96K
代理商: RA18H1213G
MITSUBISHI RF MOSFET MODULE
R A18H1213G
1.24-1.30GHz
18W
12.5V, 3 Stage Amp. For MOBILE RADIO
RA18H1213G
MITSUBISHI ELECTRIC
1/9
5 April 2004
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA18H1213G is a 18-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 1.24- to
1.30-GHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 4.5V (typical) and 5V (maximum). At
V
GG
=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>18W,
η
T
>20% @ V
DD
=12.5V, V
GG
=5V, P
in
=200mW
Broadband Frequency Range: 1.24-1.30GHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA18H1213G-01
Antistatic tray,
10 modules/tray
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
BLOCK
DIAGRAM
2
4
1
5
3
PACKAGE CODE: H2S
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