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參數(shù)資料
| 型號： | RA08H1317M-E01 |
| 廠商： | Mitsubishi Electric Corporation |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:13; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| 中文描述： | 135 - 175MHz時8瓦特12.5V便攜式/移動通信 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 53K |
| 代理商： | RA08H1317M-E01 |
MITSUBISHI RF POWER MODULE
R A 0 8 H 1 3 1 7 M
RA08H1317M
MITSUBISHI ELECTRIC
7/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap
is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and
coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and
matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 μm (a heat sink that is not flat or particles between module and heat sink may
cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later
when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The soldering temperature must be lower than 260°C for a maximum of 10 seconds, or lower than 350°C for a maximum
of three seconds.
Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At P
out
=8W, V
DD
=12.5V and P
in
=20mW each stage transistor operating conditions are:
P
in
(W)
(W)
(°C/W)
1
st
0.02
1.5
2
nd
1.5
8.0
The channel temperatures of each stage transistor T
ch
= T
case
+ (V
DD
x I
DD
- P
out
+ P
in
) x R
th(ch-case)
are:
T
ch1
= T
case
+ (12.5V x 0.3A – 1.5W + 0.02W) x 4.0°C/W
T
ch2
= T
case
+ (12.5V x 1.32A – 8.0W + 1.5W) x 2.4°C/W
For long-term reliability, it is best to keep the module case temperature (T
case
) below 90°C. For an ambient
temperature T
air
=60°C and P
out
=8W, the required thermal resistance R
th (case-air)
= ( T
case
- T
air
) / ( (P
out
/
η
T
) - P
out
+
P
in
) of the heat sink, including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (8W/40% – 8W + 0.02W) = 2.50 °C/W
When mounting the module with the thermal resistance of 2.50 °C/W, the channel temperature of each stage transistor
is:
T
ch1
= T
air
+ 39.1 °C
T
ch2
= T
air
+ 54.0 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Stage
P
out
R
th(ch-case)
I
DD
@
η
T
=40%
(A)
0.3
V
DD
(V)
4.0
2.4
1.32
12.5
= T
case
+ 9.1 °C
= T
case
+ 24.0 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA08N1317M | Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| RA08N1317M-01 | Anti-Static Storage Bags; External Height:8"; External Width:5"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| RA08N1317M-E01 | Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| RA13H1317M-E01 | GIGATRUE 550 CAT6 PATCH 10 FT, NON BOOT, PURPLE |
| RA13H1317M | 135-175MHz 13W 12.5V MOBILE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA-08-K | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA-08-K-T | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA08N1317M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
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