參數(shù)資料
型號(hào)： RA08H1317M-E01
廠商： Mitsubishi Electric Corporation
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:13; Connector Shell Size:11; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
中文描述： 135 - 175MHz時(shí)8瓦特12.5V便攜式/移動(dòng)通信
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 53K
代理商： RA08H1317M-E01
MITSUBISHI RF MOSFET MODULE
R A 0 8 H 1 3 1 7 M
135-175MHz
8W
12.5V PORTABLE/MOBILE RADIO
RA08H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA08H1317M is a 8-watt RF MOSFET Amplifier Module
for 12.5-volt portable/ mobile radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>8W @ V
DD
=12.5V, V
GG
=3.5V, P
in
=20mW
η
T
>40% @ P
out
=8W (V
GG
control), V
DD
=12.5V, P
in
=20mW
Broadband Frequency Range: 135-175MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA08H1317M-E01
RA08H1317M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料
PDF描述
RA08N1317M Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
RA08N1317M-01 Anti-Static Storage Bags; External Height:8"; External Width:5"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
RA08N1317M-E01 Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
RA13H1317M-E01 GIGATRUE 550 CAT6 PATCH 10 FT, NON BOOT, PURPLE
RA13H1317M 135-175MHz 13W 12.5V MOBILE RADIO
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RA08N1317M_06 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
RA08N1317M_10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO
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