參數(shù)資料
型號: PTB32005X
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN microwave power transistors
中文描述: C BAND, Si, NPN, RF POWER TRANSISTOR
封裝: METAL CERAMIC, SOT-440A, 3 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 66K
代理商: PTB32005X
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistors
PTB32001X; PTB32003X;
PTB32005X
Fig.5 Prematching test circuit board for PTB32001X.
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity:
ε
r
= 2.55.
Substrate: circuits on a double copper-clad printed-circuit board Teflon fibreglass dielectric.
handbook, full pagewidth
100 pF
(ATC)
8
4
2
0.8
3.7
30
input
10
4
30
19.3
2.2
output
MSA115
Fig.6 Prematching test circuit board for PTB32003X.
Dimensions in mm.
Thickness: 0.8 mm.
Permittivity:
ε
r
= 2.55.
Substrate: circuits on a double copper-clad printed board Teflon fibre glass dielectric.
handbook, full pagewidth
input
output
100 pF
(ATC)
30
14.8
2.3
3.8
10.5
17.4
2.3
8.8
30
2.3
0.8
3.1
9.4
MSA116
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