參數(shù)資料
型號: PHB45N03LTA
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 61K
代理商: PHB45N03LTA
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHB45N03LT
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
0.01
0.1
1
10
7528-30
Zth j-mb / (K/W)
D =
t
p
t
p
T
T
P
D
t
D =
0
0.02
0.05
0.1
0.2
0.5
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
0
20
40
60
80
9528-30
VDS / V
ID / A
2.5
3
3.5
4
4.5
5
10
6
VGS / V =
1
10
100
1
10
100
1000
7528-30
VDS / V
ID / A
tp = 10 us
100 us
1 ms
10 ms
RDS(ON) = VDS / ID
DC
0
20
40
60
80
0
9528-30
4.5
ID / A
RDS(ON) / mOhm
VGS / V =
10
6
5
4
10
20
30
40
December 1997
4
Rev 1.300
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