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參數(shù)資料
| 型號(hào)： | PHB45N03LTA |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 61K |
| 代理商： | PHB45N03LTA |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHB45N03LT
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
1
0.5
-
-
-
-
-
-
-
TYP.
-
-
1.5
-
-
0.05
-
10
20
16
-
MAX.
-
-
2
-
2.3
10
500
100
24
21
45
UNIT
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 30 V; V
GS
= 0 V;
μ
A
μ
A
nA
m
m
m
T
j
= 175C
I
GSS
R
DS(ON)
Gate source leakage current
Drain-source on-state
resistance
V
GS
=
±
5 V; V
= 0 V
V
GS
= 5 V; I
D
= 25 A
V
GS
= 10 V; I
= 25 A
V
GS
= 5 V; I
D
= 25 A; T
j
= 175C
DYNAMIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
I
D
= 40 A; V
DD
= 24 V; V
GS
= 5 V
MIN.
8
TYP.
16
MAX.
-
UNIT
S
-
-
-
-
-
-
-
-
-
-
-
-
23
3
9
1050
270
140
30
80
95
40
3.5
4.5
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 15 V; I
D
= 25 A;
V
= 5 V; R
= 5
Resistive load
45
130
135
55
-
-
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
45
UNIT
A
-
-
-
-
-
-
180
1.2
-
-
-
A
V
I
F
= 25 A; V
GS
= 0 V
I
F
= 40 A; V
GS
= 0 V
I
F
= 40 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 25 V
0.95
1.0
52
0.08
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
ns
μ
C
December 1997
2
Rev 1.300
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| PHB45N03LTA,118 | 制造商:NXP Semiconductors 功能描述:PHB45N03LTA/SOT404/REEL13// - Tape and Reel |
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