參數(shù)資料
型號(hào): PHB23NQ10T
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 99K
代理商: PHB23NQ10T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP23NQ10T, PHB23NQ10T
PHD23NQ10T
MECHANICAL DATA
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
TO-220
D
D1
q
P
L
1
2
3
L2
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT
A1
b1
D1
e
P
mm
2.54
q
Q
A
b
D
c
L2
(1)
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
E
L
97-06-11
August 1999
7
Rev 1.100
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