參數(shù)資料
型號(hào)： PAC7116
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： Microcontroller Family Hardware Specifications
中文描述： 微控制器系列硬件規(guī)格
文件頁(yè)數(shù)： 34/56頁(yè)
文件大?。?/td> 471K
代理商： PAC7116
MAC7100 Microcontroller Family Hardware Specifications, Rev. 1.2
Preliminary
Electrical Characteristics
Freescale Semiconductor
34
3.13.7 CFM Timing Specifications
Table 35
lists the time required to execute various operations described in the
Section 3.13.1
through
Section 3.13.6
. For operating conditions other than those assumed below,
Equation 19
through
Equation 29
must be used to calculate the timing for specific commands under those conditions.
Table 35. CFM Timing Characteristics
Conditions are shown in
Table 7
unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
X1
D System Clock
f
NVM
f
sys
0.5
—
50
1
NOTES:
1. Subject to restrictions in
Table 19
and
Table 20
for operating characteristics of the oscillator and PLL.
2. Minimum erase and programming times are achieved with the indicated maximum
f
SYS
(which is
f
IPS
×
2, and subject to the
limits of
Table 19
and
Table 20
) and corresponding maximum
f
NVMOP
. Maximum erase and programming times are
dependent on the combination of
f
NVMOP
and
f
IPS
; values shown are calculated for
f
IPS
= 2 MHz and
f
NVMOP
= 154 KHz
.
3. Minimum blank check or page erase verify time assumes the first word in the array is blank and the second is not. Maximum
blank check or page erase verify time assumes the entire block or page is blank.
4. Data signature timing is dependant on the number of words or half-words compressed for the program and data arrays,
respectively. Minimum time is for two words or half-words; maximum time is for the entire array.
MHz
X2
D Bus frequency for Programming or Erase Operations
f
NVM
f
ips
1
—
—
MHz
X3
D Program/Erase Operating Frequency
f
NVMOP
150
—
200
kHz
X4
P Programming Time,
2
Single Word
f
SYS
= 50 MHz
t
swpgm
47.1
—
71.0
μ
s
f
SYS
= 40 MHz
48.1
—
71.0
X5
D Programming Time,
2
Consecutive Word Burst
f
SYS
= 50 MHz
t
bwpgm
20.8
—
30.5
μ
s
f
SYS
= 40 MHz
21.3
—
30.5
X6
D Programming Time,
2
32-word Row Burst
f
SYS
= 50 MHz
t
brpgm
693.1
—
1,016.5
μ
s
f
SYS
= 40 MHz
706.8
—
1,016.5
X7a P Page Erase Time,
2
Program Flash
f
SYS
= 50 MHz
t
erap
21.0
—
26.6
ms
f
SYS
= 40 MHz
21.3
—
26.6
X7b P Page Erase Time,
2
Data Flash
f
SYS
= 50 MHz
t
erad
5.2
—
6.7
ms
f
SYS
= 40 MHz
5.3
—
6.7
X8
P Mass Erase Time
2
t
mass
100
—
130
ms
X9a D Blank Check Time,
3
Program Flash per Block
MAC71
x
1, MAC71
x
6 t
bcheckp
16
—
131,087
t
IPS
MAC71
x
2
16
—
65,551
X9b D Blank Check Time,
3
Data Flash per Block
t
bcheckd
16
—
8,207
t
IPS
X9c D Page Erase Verify Time
3
Program Flash
t
pevp
16
—
1,039
t
IPS
Data Flash
t
pevd
16
—
271
X10 D Data Signature Time
4
MAC71
x
6, Program
t
dsig
17
—
262,159
t
IPS
MAC71
x
1, Program
17
—
131,087
MAC71
x
2, Program
17
—
65,551
MAC71
xx
, Data
17
—
16,399
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