參數(shù)資料
型號(hào)： PA28F800B5T70
廠(chǎng)商： INTEL CORP
元件分類(lèi)： PROM
英文描述： SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
中文描述： 1M X 8 FLASH 5V PROM, 80 ns, PDSO44
封裝： 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件頁(yè)數(shù)： 32/38頁(yè)
文件大?。?/td> 501K
代理商： PA28F800B5T70
SMART 5 BOOT BLOCK MEMORY FAMILY
E
32
ADVANCE INFORMATION
Address Stable
Device and
Address Selection
V
IL
V
V
ADDRESSES (A)
IH
IL
V
V
IH
IL
V
V
IH
IL
V
V
CE# (E)
OE# (G)
WE# (W)
DATA (D/Q)
IH
V
IL
V
RP#(P)
OL
V
High Z
Valid Output
Data
Valid
Standby
High Z
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
0599-14
Figure 15. AC Waveforms for Read Operations
5.6
V
CC
= 5 V ± 10%
Erase and Program Timings
—Commercial and Extended Temperature
Temp
Commercial
Extended
V
PP
5 V ± 10%
12 V ± 5%
5 V ± 10%
12 V ± 5%
Parameter
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Units
Boot/Parameter Block Erase Time
7
7
7
7
s
Main Block Erase Time
14
14
14
14
s
Main Block Write Time (Byte Mode)
s
Main Block Write Time (Word Mode)
s
Byte Program Time
100
100
100
100
μ
s
Word Program Time
100
100
100
100
μ
s
NOTES:
1.
2.
All numbers are sampled, not 100% tested.
Max erase times are specified under worst case conditions. The max erase times are tested at the same value
independent of V
CC
and V
PP
.
See Note 3 for typical conditions.
Typical conditions are 25 °C with V
and V
at the center of the specified voltage range.
Production programming using
V
CC
= 5.0 V, V
PP
= 12.0 V typically results in a 60% reduction in programming time.
Contact your Intel representative for information regarding maximum byte/word write specifications.
Max program times are guaranteed for the two parameter blocks and 96-KB main block only.
3.
4.
5.
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