參數(shù)資料
型號: PA28F400CV-T80
廠商: Intel Corp.
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位SmartVoltage啟動塊閃存系列
文件頁數(shù): 24/50頁
文件大小: 559K
代理商: PA28F400CV-T80
28F400BX-T/B, 28F004BX-T/B
During Erase Suspend mode, the chip can go into a
pseudo-standby mode by taking CE
Y
to V
IH
and the
active current is now a maximum of 10 mA. If the
chip is enabled while in this mode by taking CE
Y
to
V
IL
, the Erase Resume command can be issued to
resume the erase operation.
Upon completion of reads from any block other than
the block being erased, the Erase Resume com-
mand must be issued. When the Erase Resume
command is given, the WSM will continue with the
erase sequence and complete erasing the block. As
with the end of erase, the status register must be
read, cleared, and the next instruction issued in or-
der to continue.
4.4.6 EXTENDED CYCLING
Intel has designed extended cycling capability into
its ETOX III flash memory technology. The 4-Mbit
boot block flash family is designed for 100,000 pro-
gram/erase cycles on each of the seven blocks. The
combination of low electric fields, clean oxide pro-
cessing and minimized oxide area per memory cell
subjected to the tunneling electric field, results in
very high cycling capability.
24
相關(guān)PDF資料
PDF描述
PA28F400BL-T150 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
PA28F400BV-T60 POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90%
PA28F400BX-T120 4-MBIT (256K X 16, 512K X 8) BOOT BLOCK FLASH MEMORY FAMILY
PA28F400CV-B60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
PA28F400BVB80 4-MBIT (256K X 16, 512K X 8)SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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