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參數(shù)資料
| 型號： | PA28F200CV-T80 |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 2兆位SmartVoltage啟動塊閃存系列 |
| 文件頁數(shù)： | 32/48頁 |
| 文件大小： | 562K |
| 代理商： | PA28F200CV-T80 |
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28F200BX-T/B, 28F002BX-T/B
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
OH1
Output High Voltage (TTL)
2.4
V
V
OH2
Output High Voltage (CMOS)
0.85 V
CC
V
V
CC
b
0.4
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Erase/Write Operations
7
11.4
12.0
12.6
V
V
PPH
V
PP
during Erase/Write Operations
8
10.8
12.0
13.2
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
Unlock Voltage
2.0
V
V
HH
11.5
13.0
V
Boot Block Write/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the device is read while in Erase Suspend Mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block Erases and Word/Byte Writes are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and
V
PPL
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
to less than 1 mA typical in static operation.
6. CMOS Inputs are either V
CC
g
0.2V or GND
g
0.2V. TTL Inputs are either V
IL
or V
IH
.
7. V
PP
e
12.0V
g
5% for applications requiring 100,000 block erase cycles.
8. V
PP
e
12.0V
g
10% for applications requiring wider V
PP
tolerances at 100 block erase cycles.
9. For the 28F002BX, address pin A
10
follows the C
OUT
capacitance numbers.
10. I
CCR
typical is 25 mA for X16 active read current.
32
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PDF描述 |
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| PA28F200BL-T150 | 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BV-T80 | POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90% |
| PA28F200BV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BV-B80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BX-T60 | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
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| PA28F400B5B60 | 制造商:Intel 功能描述: |
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| PA28F400B5T60 | 制造商:Intel 功能描述: |
| PA28F400B5T80 | 制造商:Intel 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 80ns 44-Pin SOP |
| PA28F400BL-B150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBlT (256K x 16, 512K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
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