參數(shù)資料
型號: PA28F200CV-T80
廠商: Intel Corp.
英文描述: 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 2兆位SmartVoltage啟動塊閃存系列
文件頁數(shù): 29/48頁
文件大?。?/td> 562K
代理商: PA28F200CV-T80
28F200BX-T/B, 28F002BX-T/B
DC CHARACTERISTICS
(Continued)
Symbol
Parameter
Notes Min Typ
Max
Unit
Test Condition
I
CCS
V
CC
Standby Current
1, 3
1.5
mA V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
IH
m
A V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
CC
g
0.2V
28F200BX:
BYTE
Y
e
V
CC
g
0.2V or GND
m
A RP
Y
e
GND
g
0.2V
mA V
CC
e
V
CC
Max, CE
Y
e
GND
f
(max)
e
10 MHz, f
(typ)
e
5 MHz
I
OUT
e
0 mA, CMOS Inputs
mA V
CC
e
V
CC
Max, CE
Y
e
GND
f
(max)
e
10 MHz, f
(typ)
e
5 MHz
I
OUT
e
0 mA, TTL Inputs
100
I
CCD
V
CC
Deep Power-Down Current
1
0.20
1.2
I
CCR
V
CC
Read Current for
28F200BX Word-Wide and
Byte-Wide Mode and
28F002BX Byte-Wide Mode
1, 5,
6, 10
20
55
20
60
I
CCW
V
CC
Word Byte Write Current
1, 4
65
mA Word Write in Progress
I
CCE
V
CC
Block Erase Current
1, 4
30
mA Block Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA CE
Y
e
V
IH
Block Erase Suspended
I
PPS
V
PP
Standby Current
1
g
15
m
A V
PP
s
V
CC
m
A RP
Y
e
GND
g
0.2V RP
Y
I
PPD
V
PP
Deep Power-Down Current
1
5.0
I
PPR
V
PP
Read Current
1
200
m
A V
PP
l
V
CC
mA V
PP
e
V
PPH
Word Write in Progress
I
PPW
V
PP
Word Write Current
1, 4
40
I
PPW
V
PP
Byte Write Current
1, 4
30
mA V
PP
e
V
PPH
Byte Write in Progress
I
PPE
V
PP
Block Erase Current
1, 4
30
mA V
PP
e
V
PPH
Block Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
200
m
A V
PP
e
V
PPH
Block Erase Suspended
I
RP
Y
RP
Y
Boot Block Unlock Current
1, 4
500
m
A RP
Y
e
V
HH
m
A A
9
e
V
ID
I
ID
A
9
Intelligent Identifier Current
1, 4
500
V
ID
A
9
Intelligent Identifier Voltage
11.5
13.0
V
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
29
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