- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄367750 > PA28F200CV-B80 (Intel Corp.) 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY PDF資料下載
參數(shù)資料
| 型號(hào)： | PA28F200CV-B80 |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 中文描述： | 2兆位SmartVoltage啟動(dòng)塊閃存系列 |
| 文件頁(yè)數(shù)： | 41/48頁(yè) |
| 文件大?。?/td> | 562K |
| 代理商： | PA28F200CV-B80 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)當(dāng)前第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)
28F200BX-T/B, 28F002BX-T/B
EXTENDED TEMPERATURE OPERATION
AC CHARACTERISTICS FOR WE
Y
-CONTROLLED WRITE OPERATIONS
(1)
Versions
(4)
T28F200BX-80
(9)
T28F002BX-80
(9)
Unit
Symbol
Parameter
Notes
Min
Max
t
AVAV
t
WC
Write Cycle Time
80
ns
t
PHWL
t
PS
RP
Y
High Recovery to
WE
Y
Going Low
220
ns
t
ELWL
t
CS
CE
Y
Setup to WE
Y
Going Low
0
ns
t
PHHWH
t
PHS
RP
Y
V
HH
Setup to WE
Y
Going High
V
PP
Setup to WE
Y
Going High
Address Setup to WE
Y
Going High
6, 8
100
ns
t
VPWH
t
VPS
5, 8
100
ns
t
AVWH
t
AS
3
60
ns
t
DVWH
t
DS
Data Setup to WE
Y
Going High
4
60
ns
t
WLWH
t
WP
WE
Y
Pulse Width
60
ns
t
WHDX
t
DH
Data Hold from WE
Y
High
4
0
ns
t
WHAX
t
AH
Address Hold from WE
Y
High
3
10
ns
t
WHEH
t
CH
CE
Y
Hold from WE
Y
High
10
ns
t
WHWL
t
WPH
WE
Y
Pulse Width High
20
ns
t
WHQV1
Duration of Word/Byte
Write Operation
2, 5
7
m
s
t
WHQV2
Duration of Erase Operation (Boot)
2, 5, 6
0.4
s
t
WHQV3
Duration of Erase
Operation (Parameter)
2, 5
0.4
s
t
WHQV4
Duration of Erase Operation (Main)
2, 5, 6
0.7
s
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
RP
Y
V
HH
Hold from Valid SRD
5, 8
0
ns
t
QVPH
t
PHH
6, 8
0
ns
t
PHBR
Boot-Block Relock Delay
7, 8
100
ns
t
IR
Input Rise Time
10
ns
t
IF
Input Fall Time
10
ns
NOTES:
1. Read timing characteristics during write and erase operations are the same as during read-only operations. Refer to AC
characteristics during Read Mode.
2. The on-chip WSM completely automates program/erase operations; program/erase algorithms are now controlled inter-
nally which includes verify and margining operations.
3. Refer to command definition table for valid A
IN
.
4. Refer to command definition table for valid D
IN
.
5. Program/Erase durations are measured to valid SRD data (successful operation, SR.7
e
1).
6. For Boot Block Program/Erase, RP
Y
should be held at V
HH
until operation completes successfully.
7. Time t
PHBR
is required for successful relocking of the Boot Block.
8. Sampled but not 100% tested.
9. See Standard Test Configuration.
41
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PA28F200CV-T60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200CV-T80 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BL-T150 | 2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200BV-T80 | POWERLINE: RP40-S_D_TE - 2:1 Wide Input Voltage Range- 40 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Design Meet Safety Standard- Standard 76.2 x66.0x10.2mm Package- Efficiency to 90% |
| PA28F200BV-B60 | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PA28F200CV-T60 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F200CV-T80 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F400B5B60 | 制造商:Intel 功能描述: |
| PA28F400B5B80 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F400B5T60 | 制造商:Intel 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。