參數(shù)資料
型號(hào): PA2423
廠商: SiGe Semiconductor, Inc.
英文描述: 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information
中文描述: 2.4 GHz的藍(lán)牙Class 1功率放大器IC產(chǎn)品信息
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 370K
代理商: PA2423
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Absolute Maximum Ratings
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
-0.3
+3.6
V
V
CTL
Control Voltage
-0.3
V
CC
V
V
RAMP
Ramping Voltage
-0.3
V
CC
V
IN
RF Input Power
+8
dBm
T
A
Operating Temperature Range
-4
0
+8
5
°
C
T
STG
Storage Temperature Range
-4
0
+150
°
C
T
j
Maximum Junction Temperature
+15
0
°
C
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
CC0
= V
CC1
= V
CC2
= V
RAMP
= 3.3V, V
CTL
= 3.3V, P
IN
= +2dBm,T
A
=25
°
C, f = 2.45GHz,
Input and Output externally matched to 5
0 ,
unless otherwise note
d.
Symbol
Note
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
3
3.3
3.6
V
I
CC
1
Supply Current (I
CC
= I
VCC0
+ I
VCC1
+I
VCC2
), V
CTL
= 3.3V
125
150
mA
ICC
temp
3
Supply Current variation over temperature from T
A
= 25
°
C
(-4
C <T
A
<+8
C)
25
%
V
CTL
PA Output Power Control Voltage Range
0
V
CC
V
I
CTL
1
Current sourced by V
CTL
Pin
200
250
μ
A
3
Logic High Voltage
2.0
V
V
RAMP
3
Logic Low Voltage
0.8
V
I
stby
1
Leakage Current when V
ramp
= 0V, V
ctl
= high
0.5
10
μ
A
DOC# 05PDS001
Rev 9
07/26/2001
Page 3 of 10
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