參數(shù)資料
型號(hào): PA2423G
廠商: SiGe Semiconductor, Inc.
英文描述: DBMAM44PA101
中文描述: 2.4 GHz的藍(lán)牙Class 1功率放大器IC的初步信息
文件頁數(shù): 1/10頁
文件大小: 370K
代理商: PA2423G
PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Applications
Bluetooth
tm
Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Features
+22.7 dBm at 45% Power Added Efficiency
Low current 80mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
Single 3.3 V Supply Operation
Temperature Rating: -40C to +85C
8 lead Exposed Pad MSOP Plastic Package
Ordering Information
Type
Package
Shipping
Method
PA2423MB
8 - MSOP
Tape and reel
Tubes -samples
PA2423MB-EV
Evaluation kit
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423MB is designed
for
class
1
Bluetooth
applications. It delivers +22.7 dBm output power
with 45% power-added efficiency – making it
capable of overcoming insertion losses of up to
2.7 dB between amplifier output and antenna
input in class 1 Bluetooth
applications.
2.4
GHz
radio
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit provides the turn-
on/off switching of amplifier output with less than
3dB
overshoot,
meeting
specification 1.1.
the
Bluetooth
The PA2423MB operates at 3.3V DC. At typical
output power level (+22.7 dBm), its current
consumption is 125 mA.
The silicon/silicon-germanium structure of the
PA2423MB – and its exposed-die-pad package,
soldered to the system PCB – provide high
thermal conductivity and a subsequently low
junction temperature. This device is capable of
operating at a duty cycle of 100 percent.
Functional Block Diagram
Stage 1
Stage 2
Interstage
Match
Bias Generator
Ramp
Circuitry
V
CTL
V
CC0
V
RAMP
IN
OUT/ V
CC2
V
CC1
GND
GND
DOC# 05PDS001
Rev 9
07/26/2001
Page 1 of 10
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