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MC9S12XE-Family Reference Manual , Rev. 1.07
Freescale Semiconductor
843
Chapter 23
1024 KByte Flash Module (S12XFTM1024K5V2)
23.1
Introduction
The FTM1024K5 module implements the following:
1024 Kbytes of P-Flash (Program Flash) memory, consisting of 5 physical Flash blocks, intended
primarily for nonvolatile code storage
4 Kbytes of buffer RAM, consisting of 1 physical RAM block, that can be used as emulated
EEPROM using a built-in hardware scheme, as basic RAM, or as a combination of both
32 Kbytes of D-Flash (Data Flash) memory, consisting of 1 physical Flash block, that can be used
as nonvolatile storage to support the built-in hardware scheme for emulated EEPROM, as basic
Flash memory primarily intended for nonvolatile data storage, or as a combination of both
The Flash memory is ideal for single-supply applications allowing for field reprogramming without
requiring external high voltage sources for program or erase operations. The Flash module includes a
memory controller that executes commands to modify Flash memory contents or configure module
resources for emulated EEPROM operation. The user interface to the memory controller consists of the
indexedFlashCommonCommandObject(FCCOB)registerwhichiswrittentowiththecommand,global
address,data,andanyrequiredcommandparameters.Thememorycontrollermustcompletetheexecution
of a command before the FCCOB register can be written to with a new command.
Table 23-1. FTM1024K5 Revision History
Version
Number
Revision
Date
Author
Description of Changes
2.3
02FEB07
- correct FDIV vs XTAL
Table 23-8
- add Program IFR Field
Table 23-4
- Modify Security Description in
Section 23.5
- Add Version ID field to Program IFR in
Table 23-4
- swap address location for protection bytes in the configuration field
(see
Table 23-3
)
- minor edit to Program P-Flash and Program Once command
descriptions
- modify FPVIOL error condition for Unsecure Flash command
- remove reference to Flash array writes in
Section 23.5.3, “Unsecuring
the MCU using Backdoor Key Access
2.4
09MAR07
2.5
02MAY07