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參數(shù)資料
| 型號(hào)： | P4C189 |
| 廠商： | Pyramid Semiconductor Corporation |
| 英文描述： | HIGH SPEED 16 x 4 STATIC CMOS RAM WITH INVERTING OUTPUTS |
| 中文描述： | 高速16反相輸出× 4靜態(tài)CMOS存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 178K |
| 代理商： | P4C189 |
P4C189
Page 2 of 8
Document #
SRAM100
Rev OR
Commercial
Symbol
V
OH
V
OL
V
IH
V
IL
I
IL
I
IH
I
SC
Parameter
Output High Voltage
Output Low Voltage
Input High Level
Input Low Level
Input Low Current
Input High Current
Output Short Circuit
Current
Test Conditions
V
CC
= Min., V
IN
= V
IH
or V
IL
, I
OH
= –3.0 mA
V
CC
= Min., V
IN
= V
IH
or V
IL
, I
OL
= 24 mA
V
IN
= 0.5 V (except
CS
)
V
CC
= Max, V
IN
= 2.7V
V
CC
= Max., V
OUT
= 0.0V
I
L
Output Leakage Current
Industrial
P4C189
Min.
2.4
2.0
Max.
0.5
0.8
-0.6
5
-60
55
70
Unit
V
V
V
V
mA
μA
mA
mA
Power Supply Current
50
μA
V
CC
= Max.
I
CC
V
OUT
= V
CC
, V
CC
= Max.
MAXIMUM RATINGS
(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
V
CC
+0.5
V
TERM
V
T
A
Operating Temperature
–55 to +125
°C
Symbol
Parameter
Conditions Typ. Unit
C
IN
C
OUT
Input Capacitance
V
IN
= 0V
5
pF
Output Capacitance V
OUT
= 0V
7
pF
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz)
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
T
BIAS
Temperature Under
Bias
–55 to +125
°C
T
STG
I
OUT
Storage Temperature
–65 to +150
°C
DC Output Current
20
mA
Grade
(2)
Commercial
Industrial
Ambient Temp
0°C to 70°C
–40°C to 85°C
Gnd
0V
Vcc
5.0V ±10%
5.0V ±10%
0V
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
V
IN
= 0.5 V (
CS
)
-1.2
-150
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
and I
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
5.
CE
is LOW and
WE
is HIGH for READ cycle.
6.
WE
is HIGH, and address must be valid prior to or coincident with
CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
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