參數(shù)資料
型號: P4C1298-45PMB
廠商: Pyramid Semiconductor Corporation
英文描述: ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
中文描述: 超高速64K的× 4靜態(tài)CMOS存儲器
文件頁數(shù): 3/11頁
文件大小: 135K
代理商: P4C1298-45PMB
P4C1298/L
Page 3 of 11
Document #
SRAM135
REV OR
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
DATA RETENTION CHARACTERISTICS (P4C1298L ONLY)
Symbol
V
DR
I
CCDR
t
CDR
t
R
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditions
CE
V
CC
–0.2V,
V
IN
V
–0.2V or
V
IN
0.2V
Min
2.0
0
t
RC
§
Typ.*
V
=
2.0V 3.0V
10
15
Max
V
=
2.0V 3.0V
1000
2000
Unit
V
μA
ns
ns
DATA RETENTION WAVEFORM
*T
A
= +25°C
§
t
RC
= Read Cycle Time
This parameter is guaranteed but not tested.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
Military
–15
–20
–25
–35
Unit
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
115
120
120
120
135
150
160
160
160
125
115
110
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