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參數(shù)資料
| 型號： | P0120003P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 800mW GaAs Power FET (Pb-Free Type) |
| 中文描述： | 800mW的GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 623K |
| 代理商： | P0120003P |
[Typical Performance]
KP023J Application Circuit
Vds=6V Ids=220mA, Tc=25°C
Frequency characteristics were measured with Pout at 17dBm.
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
Web Site:
www.sei.co.jp/GaAsIC/
-8-
Technical Note
P0120003P
800mW GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
10
11
15
20
25
30
35
40
45
180
185
190
195
200
205
210
215
-1
1
3
5
7
9
Pin (dBm)
IP3
Ids
Gain
Pout
Pout,Gain,IP3,Ids vs Pin
P
G
I
I
35
36
37
38
39
40
41
42
43
2100
2120
2140
2160
2180
IP3 vs Frequency
Frequency (MHz)
Vds=6V
Vds=5V
Vds=4V
I
38.0
38.5
39.0
39.5
40.0
40.5
41.0
41.5
42.0
2100
2120
2140
2160
2180
IP3 vs Frequency
I
Frequency (MHz)
Frequency (MHz)
10.4
10.6
10.8
11.0
11.2
11.4
11.6
2100
2120
2140
2160
2180
Gain vs Frequency
Vds=6V
Vds=5V
Vds=4V
G
11.0
11.1
11.2
11.3
11.4
11.5
2100
2120
2140
2160
2180
Gain vs Frequency
Frequency (MHz)
Ids=220mA
Ids=190mA
Ids=160mA
G
-65
-60
-55
-50
-45
-40
-35
10
12
14
16
18
20
22
IM3,Im5 vs Pout
I
I
Pout (dBm)
IM3
IM5
Ids=220mA
Ids=190mA
Ids=160mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P0120004P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1.5W GaAs Power FET (Pb-Free Type) |
| P0120007P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:250mW GaAs Power FET (Pb-Free Type) |
| P0120008P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:1W GaAs Power FET (Pb-Free Type) |
| P0120009P | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:2W GaAs Power FET (Pb-Free Type) |
| P012-006 | 功能描述:交流電源線 2 COND 6’ LAPTOP BLK RoHS:否 制造商:Schaffner 地區(qū):North American 插頭:NEMA 5-15P 插座:C13 Locking 功率額定值:2500 W 電流額定值:10 A 線規(guī) - 美國線規(guī)（AWG）:18 電壓額定值:250 V 長度:6 ft 屏蔽: 外殼顏色:Black |
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