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OPA699
SBOS261B
5
www.ti.com
AC PERFORMANCE (see Figure 2)
Small Signal Bandwidth (V
O
< 0.5V
PP
)
G = +6
G = +12
G =
–
6
V
< 0.5V
V
O
< 0.5V
PP
, G = +4
V
O
< 0.5V
, G = +6
V
O
= 2V
PP
234
83
242
880
8
30
250
200
190
180
MHz
MHz
MHz
MHz
dB
MHz
MHz
min
typ
typ
min
typ
typ
min
B
C
C
B
C
C
B
Gain Bandwidth Product (G
≥
+20)
Gain Peaking
0.1dB Gain Flatness Bandwidth
Large-Signal Bandwidth
Step Response
Slew Rate
Rise-and-Fall Time
Settling Time: 0.05%
Spurious-Free Dynamic Range, Even
700
650
600
200
190
180
2V Step
0.5V Step
2V Step
1050
1.75
8
64
70
850
1.8
800
1.9
700
2.1
V/
μ
s
ns
ns
dB
dB
min
max
typ
min
min
B
B
C
B
B
f = 5MHz, V
O
= 2V
PP
f = 5MHz, V
O
= 2V
PP
61
69
60
67
58
65
Odd
Input Noise
Voltage Noise Density
Current Noise Density
f
≥
1MHz
f
≥
1MHz
4.2
2.1
4.6
2.6
5.2
2.8
5.6
3.0
nV/
√
Hz
pA/
√
Hz
max
max
B
B
DC PERFORMANCE
Open-Loop Voltage Gain (A
OL
)
Input Offset Voltage
Average Drift
Input Bias Current
(4)
Average Drift
Input Offset Current
Average Drift
V
O
= V
CM
±
0.5V
66
±
2
—
+3
—
±
0.4
—
56
±
6
54
±
7
±
14
±
11
±
25
±
2.5
±
15
53
±
8
±
14
±
12
±
25
±
3
±
15
dB
mV
μ
V/
°
C
μ
A
nA/
°
C
μ
A
nA/
°
C
min
max
max
max
max
max
max
A
A
B
A
B
A
B
±
10
±
2
INPUT
Common-Mode Rejection Ratio
Common-Mode Input Range
(5)
Input Impedance
Differential-Mode
Common-Mode
Input Referred, V
CM
±
0.5V
58
54
53
52
dB
V
min
min
typ
A
A
C
V
CM
±
0.8
V
CM
±
0.7
V
CM
±
0.7
V
CM
±
0.6
M
|| pF
0.32 || 1
3.5 || 1
M
|| pF
typ
C
OUTPUT
Output Voltage Range
Current Output, Sourcing
V
H
= V
CM
+ 1.8V, V
L
= V
CM
–
1.8V
R
L
≥
500
V
CM
±
1.6
+70
–
70
0.2
V
CM
±
1.4
+60
–
60
V
CM
±
1.4
+55
–
55
V
CM
±
1.3
+50
–
50
V
min
min
min
typ
A
A
A
C
mA
mA
Sinking
Closed-Loop Output Impedance
G = +4, f < 100kHz
POWER SUPPLY
Operating Voltage, Specified
5
—
14.3
14.3
V
V
typ
max
max
min
C
A
A
A
Maximum
+12
14.9
13.6
+12
15.1
13.4
+12
15.3
13.2
Quiescent Current, Maximum
V
S
= +5V
V
S
= +5V
V
S
= 4.5V to 5.5V
mA
mA
Minimum
Power-Supply Rejection Ratio
+PSRR (Input Referred)
70
dB
typ
C
OPA699ID
0
°
C to
70
°
C
(2)
–
40
°
C to
+85
°
C
(2)
MIN/
MAX
LEVEL
(3)
TEST
PARAMETER
CONDITIONS
+25
°
C
+25
°
C
(1)
UNITS
ELECTRICAL CHARACTERISTICS: V
S
= +5V
Boldface
limits are tested at
+25
°
C.
G = +6, R
F
= 750
,
R
L
= 500
tied to V
CM
= +2.5V, V
L
= V
CM
–
1.2V, and V
H
= V
CM
+1.2V, (see Figure 2 for AC performance only), unless otherwise noted.
TYP
MIN/MAX OVER TEMPERATURE
NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25
°
C Test Level A specifications. Junction temperature = ambient
temperature +23
°
C at high temperature limit Test Level A specifications.
(2) Junction temperature = ambient at low temperature limit; junction temperature = ambient +1
°
C at high temperature limit for over-temperature
tested specifications.
(3) Test Levels: (A) 100% tested at +25
°
C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and
simulation. (C) Typical value for information only.
(4) Current is considered positive out of node.
(5) CMIR tested as < 3dB degradation from minimum CMRR at specified limits.
(6) I
(V
bias current) is negative, and I
(V
bias current) is positive, under these conditions. See Note 3 and Figures 2 and 12.
(7) Limiter feedthrough is the ratio of the output magnitude to the sinewave added to V
(or V
) when V
= 0.
(8) V
slew rate conditions are: V
= V
+0.4V, G = +6, V
= V
–
1.2V, V
= step between V
+1.2V and V
. V
slew rate conditions are similar.
(9) Linearity Guardband is defined for an output sinusoid (f = 5MHz, V
= V
±
1V
) centered between the limiter levels (V
H
and V
L
). It is the
difference between the limiter level and the peak output voltage where SFDR decreases by 3dB (see Figure 8).