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參數(shù)資料
| 型號： | NST3946DXV6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual General Purpose Transistor(雙通用晶體管) |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 160K |
| 代理商： | NST3946DXV6T1 |
NST3946DXV6T1, NST3946DXV6T5
http://onsemi.com
2
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Thermal Resistance Junction-to-Ambient
R
JA
250
(Note 1)
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
- 55 to
+150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= -1.0 mAdc, I
B
= 0)
(NPN)
(PNP)
V
(BR)CEO
40
-40
-
-
Vdc
Collector- Base Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
(I
C
= -10 Adc, I
E
= 0)
(NPN)
(PNP)
V
(BR)CBO
60
-40
-
-
Vdc
Emitter- Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
(I
E
= -10 Adc, I
C
= 0)
(NPN)
(PNP)
V
(BR)EBO
6.0
-5.0
-
-
Vdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= -30 Vdc, V
EB
= -3.0 Vdc)
(NPN)
(PNP)
I
BL
-
-
50
-50
nAdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= -30 Vdc, V
EB
= -3.0 Vdc)
(NPN)
(PNP)
I
CEX
-
-
50
-50
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(NPN)
(I
C
= -0.1 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -1.0 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -10 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -50 mAdc, V
CE
= -1.0 Vdc)
(I
C
= -100 mAdc, V
CE
= -1.0 Vdc)
(PNP)
h
FE
40
70
100
60
30
60
80
100
60
30
-
-
300
-
-
-
-
300
-
-
-
Collector- Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(NPN)
(I
C
= -10 mAdc, I
B
= -1.0 mAdc)
(I
C
= -50 mAdc, I
B
= -5.0 mAdc)
(PNP)
V
CE(sat)
-
-
-
-
0.2
0.3
-0.25
-0.4
Vdc
Base- Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(NPN)
(I
C
= -10 mAdc, I
B
= -1.0 mAdc)
(I
C
= -50 mAdc, I
B
= -5.0 mAdc)
(PNP)
V
BE(sat)
0.65
-
-0.65
-
0.85
0.95
-0.85
-0.95
Vdc
2. Pulse Test: Pulse Width
≤
300
μ
s; Duty Cycle
≤
2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NST3946DXV6T1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| NST3946DXV6T1G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Switching NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T5 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NST3946DXV6T5G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual Switching NPN & PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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