參數(shù)資料
型號： NST30010MXV6T1G
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： Dual Matched General Purpose Transistor(雙通用晶體管)
中文描述： 100 mA, 30 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： LEAD FREE, ULTRA SMALL, CASE 463A-01, 6 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 57K
代理商： NST30010MXV6T1G
NST30010MXV6T1G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Parameter
Symbol
One Device
Heated
Both Devices
Heated
Unit
Total Device Dissipation,
T
A
= 25
°
C (Note 1)
Derate above 25
°
C (Note 1)
T
= 25
°
C (Note 2)
Derate above 25
°
C (Note 2)
Two Devices Heated Total Package
P
D
357
2.9
429
3.4
500 (250 ea)
4.0
661 (331 ea)
5.3
mW
mW/
°
C
mW
mW/
°
C
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
One Heated Device
R
JA
350
291
250
189
°
C/W
Thermal Resistance
Junction-to-Ambient (Note 1)
Junction-to-Ambient (Note 2)
Unheated Device Heated by
Heated Device
JA
149
88
°
C/W
Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Lead Attached to Heated Device
JL
128
152
76
85
°
C/W
Thermal Resistance
Junction-to-Lead (Note 1)
Junction-to-Lead (Note 2)
Heated Device Heating Lead
Attached to Unheated Device
JL
224
222
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB
76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage, (I
C
= 10 mA)
V
(BR)CEO
30
V
CollectorEmitter Breakdown Voltage, (I
C
= 10 A, V
EB
= 0)
V
(BR)CES
30
V
CollectorBase Breakdown Voltage, (I
C
= 10 A)
V
(BR)CBO
30
V
EmitterBase Breakdown Voltage, (I
E
= 1.0 A)
V
(BR)EBO
5.0
V
Collector Cutoff Current (V
CB
= 30 V)
Collector Cutoff Current
(V
CB
= 30 V, T
A
= 150
°
C)
I
CBO
15
4.0
nA
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 A, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V) (Note 3)
h
FE
h
FE(1)/
h
FE(2)
270
420
0.9
520
1.0
800
CollectorEmitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA)
V
CE(sat)
0.30
0.60
V
BaseEmitter Saturation Voltage
(I
C
= 10 mA, I
B
= 1.0 mA)
(I
C
= 100 mA, I
B
= 10 mA)
V
BE(sat)
0.75
0.90
V
BaseEmitter On Voltage
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V) (Note 4)
V
BE(on)
V
BE(1)
V
BE(2)
0.60
1.0
0.75
0.82
2.0
V
mV
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product, (I
C
= 10 mA, V
CE
= 5 Vdc, f = 100 MHz)
f
T
100
MHz
Output Capacitance, (V
CB
= 10 V, f = 1.0 MHz)
C
ob
4.5
pF
Noise Figure, (I
C
= 0.2 mA, V
CE
= 5 Vdc, R
S
= 2 k , f = 1 kHz, BW = 200Hz)
3. h
FE(1)
/h
FE(2)
is the ratio of one transistor compared to the other transistor within the same package. The smaller h
FE
is used as numerator.
4. V
BE(1)
V
BE(2)
is the absolute difference of one transistor compared to the other transistor within the same package.
NF
10
dB
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