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參數(shù)資料
| 型號： | NP88N055KLE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 211K |
| 代理商： | NP88N055KLE |
Data Sheet D13933EJ7V0DS
4
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
°
C
P
T
00
25
50
75
100
125
150
175
200
350
300
250
200
150
100
50
d
00
25
50
T
C
- Case Temperature -
°
C
75
100
125
150
175
200
20
40
60
80
100
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature -
°
C
0
25
100
400
600
800
50
75
100
125
150
175
500
300
200
700
I
AS
= 75 A
88 A
562 mJ
232 mJ
Figure3. FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
10
1
0.1
100
0.1
1000
1
10
100
I
D(pulse)
R
DS(on)
Lmted
(V
GS
=10V)
I
D(DC)
PW=10
μ
s
1ms
10ms
DC
Powe Dsspaion
Single pulse
T
C
= 25
°
C
100
μ
s
Figure5.
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
μ
μ
Single pulse
T
C
= 25
°
C
R
th(ch-A)
= 83.3
°
C/W
R
th(ch-C)
= 0.52
°
C/W
PW - Pulse Width - s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP88N055KLE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055KLE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MLE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP88N055KLE-E1-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KLE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055KUG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KUG-E1-AY | 功能描述:MOSFET N-CH 55V 88A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP88N055MHE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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