參數(shù)資料
型號: NL27WH04DTT3
廠商: ON SEMICONDUCTOR
元件分類: 門電路
英文描述: DUAL 1-INPUT INVERT GATE, PDSO6
封裝: SC-59, SOT-23, TSOP-6
文件頁數(shù): 8/12頁
文件大小: 120K
代理商: NL27WH04DTT3
NL27WH04
http://onsemi.com
5
D1
FOR COMPONENTS
10 PITCHES
CUMULATIVE
TOLERANCE ON
TAPE
±0.2 mm
(±0.008")
2.0 mm × 1.2 mm
AND LARGER
CENTER LINES
OF CAVITY
EMBOSSMENT
USER DIRECTION OF FEED
K0
SEE
NOTE 2
P0
P2
D
E
F W
B0
+
K
t
B1
TOP
COVER
TAPE
P
SEE NOTE 2
A0
FOR MACHINE REFERENCE
ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND B0
R MIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS R"
WITHOUT DAMAGE
BENDING RADIUS
*TOP COVER
TAPE THICKNESS (t1)
0.10 mm
(0.004") MAX.
EMBOSSED
CARRIER
EMBOSSMENT
TYPICAL
COMPONENT CAVITY
CENTER LINE
TYPICAL
COMPONENT
CENTER LINE
MAXIMUM COMPONENT ROTATION
10°
CAMBER (TOP VIEW)
ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm
100 mm
(3.937")
1 mm
(0.039") MAX
250 mm
(9.843")
1 mm MAX
TAPE
Figure 6. Carrier Tape Specifications
EMBOSSED CARRIER DIMENSIONS (See Notes 1 and 2)
Tape
Size
B1
Max
D
D1
E
F
K
P
P0
P2
R
T
W
8 mm 4.35 mm
(0.171")
1.5 +0.1/
-0.0 mm
(0.059
+0.004/
-0.0")
1.0 mm
Min
(0.039")
1.75
±0.1 mm
(0.069
±0.004")
3.5
±0.5 mm
(1.38
±0.002")
2.4 mm
(0.094")
4.0
±0.10 mm
(0.157
±0.004")
4.0
±0.1 mm
(0.156
±0.004")
2.0
±0.1 mm
(0.079
±0.002")
25 mm
(0.98")
0.3
±0.05 mm
(0.01
+0.0038/
-0.0002")
8.0
±0.3 mm
(0.315
±0.012")
1. Metric Dimensions Govern–English are in parentheses for reference only.
2. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to
0.50 mm max. The component cannot rotate more than 10
° within the determined cavity
相關(guān)PDF資料
PDF描述
NM24C05MM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14
NM25C020LN 256 X 8 SPI BUS SERIAL EEPROM, PDIP8
NM25C020LZMT8 256 X 8 SPI BUS SERIAL EEPROM, PDSO8
NM25C020LVM8X 256 X 8 SPI BUS SERIAL EEPROM, PDSO8
NM27C020V200X 256K X 8 OTPROM, 200 ns, PQCC32
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NL27WZ00 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual 2−Input NAND Gate
NL27WZ00/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual 2-Input NAND Gate
NL27WZ00_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual 2−Input NAND Gate
NL27WZ00US 功能描述:邏輯門 1.65-5.5V Dual RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量(輸入/輸出):2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
NL27WZ00USG 功能描述:邏輯門 1.65-5.5V Dual 2-Input NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量(輸入/輸出):2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel