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參數(shù)資料
| 型號： | NL27WH04DTT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 門電路 |
| 英文描述： | DUAL 1-INPUT INVERT GATE, PDSO6 |
| 封裝： | SC-59, SOT-23, TSOP-6 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 120K |
| 代理商： | NL27WH04DTT3 |
NL27WH04
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
–0.5 to +7.0
V
VIN
DC Input Voltage
–0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
–0.5 to 7.0
–0.5 to VCC + 0.5
V
IIK
Input Diode Current
–20
mA
IOK
Output Diode Current
(VOUT < GND; VOUT > VCC)
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air, SC–88, TSOP–6
200
mW
TL
Lead temperature, 1 mm from case for 10 s
260
°C
Tstg
Storage temperature
–65 to +150
°C
* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
Derating — SC–88 Package: –3 mW/
_C from 65_ to 125_C
— TSOP–6 Package: –5 mW/
_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
–55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3V ± 0.3V
VCC = 5.0V ± 0.5V
0
100
20
ns/V
The
qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=80
C°
T J
=90
C°
T J
=100
C°
T J
=1
10
C°
T J
=130
C°
T J
=120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature
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| NL27WZ00 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual 2−Input NAND Gate |
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| NL27WZ00US | 功能描述:邏輯門 1.65-5.5V Dual RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| NL27WZ00USG | 功能描述:邏輯門 1.65-5.5V Dual 2-Input NAND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
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