VCC DC Supply Voltage 0." />
參數(shù)資料
型號(hào): NL17SH126P5T5G
廠(chǎng)商: ON Semiconductor
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 0K
描述: IC GATE NONINV BUFFER SOT953
標(biāo)準(zhǔn)包裝: 8,000
邏輯類(lèi)型: 緩沖器/線(xiàn)路驅(qū)動(dòng)器,非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 1
輸出電流高,低: 8mA,8mA
電源電壓: 2 V ~ 5.5 V
工作溫度: -55°C ~ 125°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: SOT-953
供應(yīng)商設(shè)備封裝: SOT-953
包裝: 帶卷 (TR)
NL17SH126
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.5 to 7.0
0.5 to VCC + 0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
±20
mA
IOUT
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND
50
mA
PD
Power dissipation in still air
50
mW
TL
Lead temperature, 1 mm from case for 10 secs
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
65 to +150
°C
ILatchup
Latchup Performance
Above VCC and Below GND at 125°C (Note 1)
±100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
T J
=
90
T J
=
100
T J
=
1
10
T J
=
130
T J
=
120
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
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