參數(shù)資料
型號: NE570DR2G
廠商: ON Semiconductor
文件頁數(shù): 3/10頁
文件大小: 0K
描述: IC COMPANDOR DUAL GAIN 16-SOIC
標(biāo)準(zhǔn)包裝: 1
類型: 壓縮擴(kuò)展器
應(yīng)用: 蜂窩式無線電,播放器
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.295",7.50mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC W
包裝: 剪切帶 (CT)
其它名稱: NE570DR2GOSCT
NE570
http://onsemi.com
2
PIN FUNCTION DESCRIPTION
Pin
Symbol
Description
1
RECT CAP 1
External Capacitor Pinout for Rectifier 1
2
RECT IN 1
Rectifier 1 Input
3
DG CELL IN 1
Variable Gain Cell 1 Input
4
GND
Ground
5
INV. IN 1
Inverted Input 1
6
RES. R3 1
R3 Pinout 1
7
OUTPUT 1
Output 1
8
THD TRIM 1
Total Harmonic Distortion Trim 1
9
THD TRIM 2
Total Harmonic Distortion Trim 2
10
OUTPUT 2
Output 2
11
RES. R3 2
R3 Pinout 2
12
INV. IN 2
Inverted Input 2
13
VCC
Positive Power Supply
14
DG CELL IN 2
Variable Gain Cell 2 Input
15
RECT IN 2
Rectifier 2 Input
16
RECT CAP 2
External Capacitor Pinout for Rectifier 2
ELECTRICAL CHARACTERISTICS VCC = +15 V, TA = 25 °C; unless otherwise stated.
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
6.0
24
V
Supply Current
No Signal
ICC
4.3
4.8
mA
Output Current Capability
IOUT
±20
mA
Output Slew Rate
SR
±0.5
V/
ms
Gain Cell Distortion (Note 1)
Untrimmed
0.3
1.0
%
Trimmed
0.05
%
Resistor Tolerance
±5
±15
%
Internal Reference Voltage
1.7
1.8
1.9
V
Output DC Shift (Note 2)
Untrimmed
±90
±150
mV
Expandor Output Noise
No signal, 15 Hz to 20 kHz
(Note 3)
20
45
mV
Unity Gain Level (Note 4)
1.0
0
+1.0
dBm
Gain Change (Notes 1 and 5)
TA = 0°C to +70°C
±0.1
±0.2
dB
Reference Drift (Note 5)
TA = 0°C to +70°C
±5.0
±10
mV
Resistor Drift (Note 5)
TA = 0°C to +70°C
+8.0, 5.0
%
Tracking Error (measured relative to value at unity gain)
equals [VO VO (unity gain)] dB V2 dBm
Rectifier Input VCC = +6.0 V
V2 = +6.0 dBm, V1 = 0 dB
V2 = 30 dBm, V1 = 0 dB
±0.2
+0.2
0.5, +1.0
dB
Channel Separation
60
dB
1. Measured at 0 dBm, 1.0 kHz.
2. Expandor AC input change from no signal to 0 dBm.
3. Input to V1 and V2 grounded.
4. 0 dB = 775 mVRMS.
5. Relative to value at TA = 25°C.
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