參數(shù)資料
型號(hào): NAND512R3A0BN6E
廠(chǎng)商: 意法半導(dǎo)體
英文描述: 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述: 128兆,256兆,512兆位,1千兆位(x8/x16)528 Byte/264字的頁(yè)面,1.8V/3V,NAND閃存芯片
文件頁(yè)數(shù): 38/57頁(yè)
文件大?。?/td> 410K
代理商: NAND512R3A0BN6E
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
38/57
Table 21. AC Characteristics for Operations
Alt.
Symbol
Note: 1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figures
34
,
35
and
36
.
2. To break the sequential read cycle, E must be held High for longer than t
EHEL
.
3. ES = Electronic Signature.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
t
ALLRL1
t
AR
Address Latch Low to
Read Enable Low
Read Electronic Signature
Min
10
10
ns
t
ALLRL2
Read cycle
Min
10
10
ns
t
BHRL
t
RR
Ready/Busy High to Read Enable Low
Min
20
20
ns
t
BLBH1
Ready/Busy Low to
Ready/Busy High
Read Busy time, 128Mb, 256Mb,
512Mb Dual Die
Max
12
12
μs
Read Busy time, 512Mb, 1Gb
Max
15
12
μs
t
BLBH2
t
PROG
Program Busy time
Max
500
500
μs
t
BLBH3
t
BERS
Erase Busy time
Max
3
3
ms
t
BLBH4
Reset Busy time, during ready
Max
5
5
μs
t
WHBH1
t
RST
Write Enable High to
Ready/Busy High
Reset Busy time, during read
Max
5
5
μs
Reset Busy time, during program
Max
10
10
μs
Reset Busy time, during erase
Max
500
500
μs
t
CLLRL
t
CLR
Command Latch Low to Read Enable Low
Min
10
10
ns
t
DZRL
t
IR
Data Hi-Z to Read Enable Low
Min
0
0
ns
t
EHBH
t
CRY
Chip Enable High to Ready/Busy High (E intercepted read)
Max
60 + t
r(1)
60 + t
r(1)
ns
t
EHEL
t
CEH
Chip Enable High to Chip Enable Low
(2)
Min
100
100
ns
t
EHQZ
t
CHZ
Chip Enable High to Output Hi-Z
Max
20
20
ns
t
ELQV
t
CEA
Chip Enable Low to Output Valid
Max
45
45
ns
t
RHBL
t
RB
Read Enable High to Ready/Busy Low
Max
100
100
ns
t
RHRL
t
REH
Read Enable High to
Read Enable Low
Read Enable High Hold time
Min
15
15
ns
t
RHQZ
t
RHZ
Read Enable High to Output Hi-Z
Min
15
15
ns
Max
30
30
t
RLRH
t
RP
Read Enable Low to
Read Enable High
Read Enable Pulse Width
Min
30
30
ns
t
RLRL
t
RC
Read Enable Low to
Read Enable Low
Read Cycle time
Min
60
50
ns
t
RLQV
t
REA
Read Enable Low to
Output Valid
Read Enable Access time
Max
35
35
ns
Read ES Access time
(3)
t
WHBH
t
R
Write Enable High to
Ready/Busy High
Read Busy time, 128Mb, 256Mb,
512Mb Dual Die
Max
12
12
μs
Read Busy time, 512Mb, 1Gb
Max
15
12
μs
t
WHBL
t
WB
Write Enable High to Ready/Busy Low
Max
100
100
ns
t
WHRL
t
WHR
Write Enable High to Read Enable Low
Min
80
60
ns
t
WLWL
t
WC
Write Enable Low to
Write Enable Low
Write Cycle time
Min
60
50
ns
相關(guān)PDF資料
PDF描述
NAND512R3A0CZB6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1F 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZB1E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2CZA6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R3A2AZA6E 功能描述:IC FLASH 512MBIT 55VFBGA RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:閃存 - NAND 存儲(chǔ)容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱(chēng):497-5040
NAND512R3A2BZA6E 功能描述:閃存 128Mbit-1Gbit 1.8/3V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512R3A2CZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步,DDR II 存儲(chǔ)容量:18M(1M x 18) 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA(13x15) 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
NAND512R3A2CZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R
NAND512R3A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film