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參數(shù)資料
| 型號： | NAND128R4A2BZA1E |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| 中文描述： | 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁面，1.8V/3V，NAND閃存芯片 |
| 文件頁數(shù)： | 20/57頁 |
| 文件大?。?/td> | 410K |
| 代理商： | NAND128R4A2BZA1E |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
20/57
DEVICE OPERATIONS
Pointer Operations
As the NAND Flash memories contain two differ-
ent areas for x16 devices and three different areas
for x8 devices (see
Figure 11.
) the read command
codes (00h, 01h, 50h) are used to act as pointers
to the different areas of the memory array (they se-
lect the most significant column address).
The Read A and Read B commands act as point-
ers to the main memory area. Their use depends
on the bus width of the device.
In x16 devices the Read A command (00h)
sets the pointer to Area A (the whole of the
main area) that is Words 0 to 255.
In x8 devices the Read A command (00h) sets
the pointer to Area A (the first half of the main
area) that is Bytes 0 to 255, and the Read B
command (01h) sets the pointer to Area B (the
■
■
second half of the main area) that is Bytes 256
to 511.
In both the x8 and x16 devices the Read C com-
mand (50h), acts as a pointer to Area C (the spare
memory area) that is Bytes 512 to 527 or Words
256 to 263.
Once the Read A and Read C commands have
been issued the pointer remains in the respective
areas until another pointer code is issued. Howev-
er, the Read B command is effective for only one
operation, once an operation has been executed
in Area B the pointer returns automatically to Area
A.
The pointer operations can also be used before a
program operation, that is the appropriate code
(00h, 01h or 50h) can be issued before the pro-
gram command 80h is issued (see
Figure 12.
).
Figure 11. Pointer Operations
AI07592
Area A
(00h)
A
Area B
(01h)
Area C
(50h)
Bytes 0- 255
Bytes 256-511
Bytes 512
-527
C
B
Pointer
(00h,01h,50h)
Page Buffer
Area A
(00h)
A
Area C
(50h)
Words 0- 255
Words 256
-263
C
Pointer
(00h,50h)
Page Buffer
x8 Devices
x16 Devices
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NAND01GW4A2BV1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128R3A2BV1E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND128W4A0CV6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A0BN6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
| NAND512R3A0CZB6T | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND128W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND128W3A0AN6E | 功能描述:閃存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND128W3A0AN6F | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND128W3A0BN6E | 功能描述:閃存 2.7-3.6V 128M(16Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND128W3A0BN6F | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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