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參數(shù)資料
| 型號(hào)： | MWT-0206Z-A9N2 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 放大器 |
| 英文描述： | 2000 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 118K |
| 代理商： | MWT-0206Z-A9N2 |
MwT-0206S-A9N2/0206Z-A9N2
2.0 – 6.0 GHz Low Noise Amplifier Module
Preliminary Data Sheet
June 2007
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2007
Please visit MwT website www.mwtinc.com for information on other MwT MMIC products.
Page 3 of 3, Updated 6/07
Package Outline:
Construction:
The 15 mil alumina substrates and 10 mil copper FET ridge are brazed onto the 25 mil carrier
using AuGe perform. The GaAs FETs are attached to the Cu ridge using AuSn perform. All
capacitors are attached using AuSn performs. The flanges are designed to accommodate 0-80
UNF-2A socket or Fillister head screws on .400 center-to-center hole spacing. The modules are
mechanically and electrically designed to be cascaded.
Notes:
1.
Custom module specifications and/or custom module mechanical configurations are available.
2.
Operating Temperature Range is –55 degrees Celsius to +105 degrees Celsius.
3.
All modules are serialized and shipped with data measured at 25 degrees Celsius. Data includes swept
small signal gain, swept input and output return loss. Noise figure and P1dB are measured in 1 GHz
increments. Special module testing is available.
4.
Test Fixtures are available.
5.
Microwave Technology reserves the right to ship modules with performance above the typical
specification.
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