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參數(shù)資料
| 型號： | MW4IC915GMBR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 860 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, CASE 1329A-02, WIDE BODY TO-272, 16 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 334K |
| 代理商： | MW4IC915GMBR1 |
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued )
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Reference Board) V
DS
= 26 V, I
DQ1
= 60 mA, I
DQ2
= 240 mA, 869 MHz<Frequency>960 MHz
Quiescent Current Accuracy over Temperature
with 1.8 k
Gate Feed Resistors (
10 to 85
°
C)
(1)
I
QT
—
±
5
—
%
Gain Flatness in 40 MHz Bandwidth @ P
out
= 3 W CW
G
F
—
0.2
—
dB
Deviation from Linear Phase in 40 MHz Bandwidth @ P
out
= 3 W CW
Φ
—
±
0.6
—
°
Delay @ P
out
= 3 W CW Including Output Matching
Delay
—
2.5
—
ns
Part
to
Part Phase Variation @ P
out
= 3 W CW
Φ
—
±
15
—
°
Typical GSM/GSM EDGE
Performances
(In Freescale Reference Board) V
DS
= 26 V, I
DQ1
= 60 mA, I
DQ2
= 240 mA,
869 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
P1dB
—
20
—
Watts
Power Gain @ P
out
= 15 W CW
G
ps
—
30
—
dB
Power Added Efficiency @ P
out
= 15 W CW
PAE
—
44
—
%
Input Return Loss @ P
out
= 15 W CW
IRL
—
15
—
dB
Error Vector Magnitude @ P
out
= 3 W Avg. including
0.6% rms source EVM
EVM
—
1.5
—
% rms
Spectral Regrowth at 400 kHz Offset @ P
out
= 3 W Avg.
SR1
—
65
—
dBc
Spectral Regrowth at 600 kHz Offset @ P
out
= 3 W Avg.
1. Refer to AN1977/D,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
AN1977.
SR2
—
83
—
dBc
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
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| MW4IC915MBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC915NBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW4IC915GNBR1 | 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW4IC915GNBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC915MBR1 | 功能描述:IC PWR AMP RF 26V 15W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW4IC915NBR1 | 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW4IC915NBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
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