參數(shù)資料
型號： MW4IC915MBR1
廠商： MOTOROLA INC
元件分類： 衰減器
英文描述： RF LDMOS Wideband Integrated Power Amplifiers
中文描述： 860 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： PLASTIC, CASE 1329-08, WIDE BODY TO-272, 16 PIN
文件頁數(shù)： 1/16頁
文件大小： 334K
代理商： MW4IC915MBR1
MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Freescale’s newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi
stage
structure. Its wideband On
Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N
CDMA and W
CDMA.
Final Application
Typical Performance: V
DD
= 26 Volts, I
DQ1
= 60 mA, I
DQ2
= 240 mA,
P
out
= 15 Watts CW, Full Frequency Band (860
960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 44%
Driver Application
Typical GSM/GSM EDGE Performances: V
DD
= 26 Volts, I
DQ1
= 60 mA,
I
DQ2
= 240 mA, P
out
= 3 Watts Avg., Full Frequency Band (869
894 MHz
and 921
960 MHz)
Power Gain — 31 dB
Power Added Efficiency — 19%
Spectral Regrowth @ 400 kHz Offset =
65 dBc
Spectral Regrowth @ 600 kHz Offset =
83 dBc
EVM — 1.5%
Capable of Handling 5:1 VSWR, @
26
Vdc, 921 MHz,
15
Watts CW
Output Power
Characterized with Series Equivalent Large
Signal Impedance Parameters
On
Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
On
Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
N Suffix Indicates Lead
Free Terminations
200
°
C Capable Plastic Package
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
1. Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes
AN1987.
MW4IC915
Rev. 5, 3/2005
Freescale Semiconductor
Technical Data
860
960 MHz, 15 W, 26 V
GSM/GSM EDGE, N
CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329
09
TO
272 WB
16
PLASTIC
MW4IC915NBR1(MBR1)
MW4IC915NBR1
MW4IC915GNBR1
MW4IC915MBR1
MW4IC915GMBR1
CASE 1329A
03
TO
272 WB
16 GULL
PLASTIC
MW4IC915GNBR1(GMBR1)
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(Top View)
!
"
Note: Exposed backside flag is source
terminal for transistors.
Freescale Semiconductor, Inc., 2005. All rights reserved.
相關(guān)PDF資料
PDF描述
MW4IC915NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MWA-210 DC-600 MHz WIDEBAND GENERAL-PURPOSE HYBRID AMPLIFIERS
MWA-220 DC-600 MHz WIDEBAND GENERAL-PURPOSE HYBRID AMPLIFIERS
MWA-230 DC-600 MHz WIDEBAND GENERAL-PURPOSE HYBRID AMPLIFIERS
MWA210 DC-600 MHz WIDEBAND GENERAL-PURPOSE HYBRID AMPLIFIERS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MW4IC915NBR1 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MW4IC915NBR1_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers
MW4S-18A 制造商:TE Connectivity 功能描述:MW4S-18A = MW 4GHZ SENSITIVE H
MW4S-18P 制造商:TE Connectivity 功能描述: 制造商:TE Connectivity 功能描述:MW4S-18P = MW 4GHZ SENSITIVE H
MW4S-26A 制造商:TE Connectivity 功能描述:
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