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參數(shù)資料
| 型號： | MUN2240T1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Bias Resistor Transistor |
| 中文描述： | 偏置電阻晶體管 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 160K |
| 代理商： | MUN2240T1 |
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–1/11
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
1
3
2
MUN2211T1
SERIES
SC–59
CASE 318D, STYLE 1
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Symbol
P
D
Max
Unit
mW
230(Note 1)
338(Note 2)
1.8 (Note 1)
2.7 (Note 2)
540(Note 1)
370(Note 2)
264(Note 1)
287(Note 2)
–55 to +150
°C/W
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R
θ
JA
°C/W
R
θ
JL
°C/W
T
J
, T
stg
°C
PIN 2
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
R
1
R
2
MARKING DIAGRAM
8X
M
8X = Specific Device Code*
M = Date Code
This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors; a
series base resistor and a base–emitter resistor. The BRT eliminates these indi-
vidual components by
integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Moisture Sensitivity Level: 1
ESD Rating – Human Body Model: Class 1
ESD Rating
– Machine Model: Class B
The SC–59 package can be soldered using wave or reflow. The modified
gull–winged leads absorb thermal stress during soldering eliminating the
possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
DEVICE MARKING INFORMATION
*See specific marking information in the device marking table on page 2 of this data sheet.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MUN2240T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN2241 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
| MUN2241T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN2241T1G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN22XXT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON BIAS RESISTOR TRANSISTOR |
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