參數(shù)資料
型號： MTY30N50
廠商： Motorola, Inc.
英文描述： TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
中文描述： TMOS是30安培，功率場效應晶體管500伏特的RDS（on）\u003d 0.15歐姆
文件頁數(shù)： 2/8頁
文件大?。?/td> 237K
代理商： MTY30N50
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250
μ
A)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
—
566
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
200
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2
—
—
7
4
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 15 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 30 Adc)
(ID = 15 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
—
0.15
Ohm
—
—
4.1
—
5
7
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)
gFS
17
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1 MHz)
Ciss
Coss
Crss
—
7200
10080
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
775
1200
Reverse Transfer Capacitance
—
120
250
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 4.7
)
td(on)
tr
td(off)
tf
—
32
60
ns
Rise Time
(VDD = 250 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
—
105
175
Turn–Off Delay Time
—
160
275
Fall Time
—
115
200
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
235
350
nC
(VDS = 400 Vdc, ID = 30 Adc,
—
35
—
—
110
—
—
65
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.95
0.88
1.2
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
—
485
—
ns
(IS = 30 Adc, VGS = 0 Vdc,
ta
tb
—
312
—
—
173
—
Reverse Recovery Stored Charge
QRR
—
8.2
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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