參數(shù)資料
型號(hào): MTV16N50E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
中文描述: 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁(yè)數(shù): 6/10頁(yè)
文件大小: 276K
代理商: MTV16N50E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
I
25
50
75
100
125
150
t, TIME (s)
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
600
400
300
200
500
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
1
1
10
100
0.1
dc
100
μ
s
1 ms
10 ms
1000
100
ID = 16 A
1
0.1
0.001
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
700
800
900
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