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參數(shù)資料
| 型號(hào)： | MTP8N06E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| 中文描述： | 8 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | MTP8N06E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
100
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
25
50
75
100
125
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
100
ID = 8 A
10
1
1
150
t, TIME (s)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1 ms
10 ms
100
μ
s
dc
80
60
40
0
1
0.1
0.01
1.0E–05
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
μ
s
20
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MTP8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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| MTP8P10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP9435BDYQ8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| MTP9435Q8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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