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參數(shù)資料
| 型號： | MTB10N40ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-02, D2PAK-3 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 276K |
| 代理商： | MTB10N40ET4 |
MTB10N40E
http://onsemi.com
7
SAFE OPERATING AREA
VGS = 20 V
SINGLE PULSE
TC = 25°C
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
100
I D
,DRAIN
CURRENT
(AMPS)
0.1
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
1
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
ID = 10 A
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
A
V
ALANCHE
ENERGY
(mJ)
600
450
300
150
0
25
50
75
100
125
1
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC(t) = r(t) RθJC
RθJC = 1°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.07
0.7
t,TIME (ms)
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1
DUTY CYCLE, D = t1/t2
P(pk)
t1
t2
Figure 15. D2PAK Power Derating Curve
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
10
μs
100
μs
1 ms
10 ms
RθJA = 50°C/W
Board material = 0.065 mil FR4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
0.2
0.4
2
4
20
40
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