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參數(shù)資料
| 型號： | MT48V4M32TG-8XT |
| 元件分類： | DRAM |
| 英文描述： | 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 13/69頁 |
| 文件大?。?/td> | 6213K |
| 代理商： | MT48V4M32TG-8XT |
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128Mb: x16, x32
MOBILE SDRAM
09005aef8071a76b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mbx16x32Mobile_2.fm - Rev. G (DRAFT) 7/04 EN
20
2001 Micron Technology, Inc. All rights reserved.
Operation
BANK/ROW ACTIVATION
Before any READ or WRITE commands can be
issued to a bank within the SDRAM, a row in that bank
must be “opened.” This is accomplished via the
ACTIVE command, which selects both the bank and
the row to be activated (seeFigure 10).
After opening a row (issuing an ACTIVE command),
a READ or WRITE command may be issued to that row,
subject to the tRCD specification. tRCD (MIN) should
be divided by the clock period and rounded up to the
next whole number to determine the earliest clock
edge after the ACTIVE command on which a READ or
WRITE command can be entered. For example, a tRCD
specification of 20ns with a 125 MHz clock (8ns
period) results in 2.5 clocks, rounded to 3. This is
reflected in Figure 11, which covers any case where 2 <
tRCD (MIN)/tCK
≤ 3. (The same procedure is used to
convert other specification limits from time units to
clock cycles.)
A subsequent ACTIVE command to a different row
in the same bank can only be issued after the previous
active row has been “closed” (precharged). The mini-
mum time interval between successive ACTIVE com-
mands to the same bank is defined by tRC.
A subsequent ACTIVE command to another bank
can be issued while the first bank is being accessed,
which results in a reduction of total row-access over-
head. The minimum time interval between successive
ACTIVE commands to different banks is defined by
tRRD.
Figure 10: Activating a Specific Row in
a Specific Bank
Figure 11: Example: Meeting tRCD (MIN) When 2 < tRCD (MIN)/tCK< 3
CS#
WE#
CAS#
RAS#
CKE
CLK
A0–A10, A11
ROW
ADDRESS
DON’T CARE
HIGH
BA0, BA1
BANK
ADDRESS
CLK
T2
T1
T3
T0
t
COMMAND
NOP
ACTIVE
READ or
WRITE
T4
NOP
RCD
DON’T CARE
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