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128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65
–
Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
SDRAM
I
DD
SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 36; V
DD
/V
DD
Q = +3.3V ±0.3V)
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
t
RCD met;
No accesses in progress
Operating Current: Burst Mode; Continuous burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
SYMBOL
I
DD
1
-7E
160
-75
150
-8E
140
UNITS NOTES
mA
3, 18,
19, 32
32
I
DD
2
2
2
2
mA
I
DD
3
50
50
40
mA
3, 12,
19, 32
I
DD
4
165
150
140
mA
3, 18,
19, 32
3, 12,
18, 19,
32, 33
t
RFC =
t
RFC (MIN)
t
RFC = 15.625μs
I
DD
5
I
DD
6
330
3
310
3
270
3
mA
mA
Self Refresh Current:
CKE
≤
0.2V
Standard
Low power (L)
I
DD
7
I
DD
7
2
1
2
1
2
1
mA
mA
4
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
/V
DD
Q Supply
Relative to V
SS
........................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
........................................ -1V to +4.6V
Operating Temperature,
T
A
(commercial)........................................0°C to +70°C
Operating Temperature,
T
A
(extended; IT parts) ......................... -40°C to +85°C
Storage Temperature (plastic)................ -55°C to +150°C
Power Dissipation ..........................................................1W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 36; V
DD
/V
DD
Q = +3.3V ±0.3V)
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q
Output Levels:
Output High Voltage (I
OUT
= -4mA)
Output Low Voltage (I
OUT
= 4mA)
SYMBOL
V
DD
/V
DD
Q
V
IH
V
IL
MIN
3
2
-0.3
MAX
3.6
V
DD
+ 0.3
0.8
UNITS NOTES
V
V
V
22
22
I
I
-5
5
μA
I
OZ
V
OH
-5
2.4
5
–
μA
V
V
OL
–
0.4
V
MAX