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參數(shù)資料
| 型號(hào)： | MT48LC8M16A2FC-75 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件頁數(shù)： | 21/59頁 |
| 文件大小： | 1822K |
| 代理商： | MT48LC8M16A2FC-75 |
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21
128Mb: x4, x8, x16 SDRAM
128MSDRAM_E.p65
–
Rev. E; Pub. 1/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
128Mb: x4, x8, x16
SDRAM
Figure 12
Terminating a READ Burst
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the
BURST TERMINATE command, and fixed-length READ
bursts may be truncated with a BURST TERMINATE com-
mand, provided that auto precharge was not activated.
The BURST TERMINATE command should be issued
x
cycles before the clock edge at which the last desired data
element is valid, where
x
equals the CAS latency minus
one. This is shown in Figure 12 for each possible CAS
latency; data element
n
+ 3 is the last desired data ele-
ment of a longer burst.
DON
’
T CARE
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
BURST
TERMINATE
NOP
T7
NOTE:
DQM is LOW.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
BANK,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
BURST
TERMINATE
NOP
X
= 1 cycle
CAS Latency = 2
CAS Latency = 3
X
= 2 cycles
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相關(guān)代理商/技術(shù)參數(shù) |
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| MT48LC8M16A2FC-75IT | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM |
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| MT48LC8M16A2FC-7EIT | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM |
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