參數(shù)資料
型號： MT16LSDT6464AG-10E
廠商： Micron Technology, Inc.
英文描述： SYNCHRONOUS DRAM MODULE
中文描述： 同步DRAM模塊
文件頁數(shù)： 12/24頁
文件大?。?/td> 614K
代理商： MT16LSDT6464AG-10E
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
12
2002, Micron Technology Inc.
Absolute Maximum Ratings
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Voltage on V
DD
, V
DDQ
Supply
Relative to V
SS
. . . . . . . . . . . . . . . . . . . . .-1V to +4.6V
Voltage on Inputs NC or I/O Pins
Relative to V
SS
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Operating Temperature
T
A
(Commercial) . . . . . . . . . . . . . . . . .. 0°C to +70°C
T
A
(Industrial). . . . . . . . . . . . . . . . . .. -40°C to +85°C
Storage Temperature (plastic) . . . . . .-55°C to +150°C
Power Dissipation, 256MB . . . . . . . . . . . . . . . . . . . . 8W
Power Dissipation, 512MB . . . . . . . . . . . . . . . . . . . 16W
Table 10: DC Electrical Characteristics and Operating Conditions – 256MB Module
Notes: 1, 5, 6; notes appear on page 17; V
DD
, V
DDQ
= +3.3V ±0.3V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V VIN V
DD
(All other pins not under test = 0V)
V
DD
, V
DDQ
V
IH
V
IL
3
2
3.6
V
V
V
V
DD
+ 0.3
0.8
40
22
22
33
-0.3
-40
Command and Address
Inputs, CKE
CK, S#
DQ, DQMB
I
I
μA
-20
-5
-5
20
5
5
μA
μA
μA
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;
0V V
OUT
V
DDQ
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -4mA)
Output Low Voltage (I
OUT
= 4mA)
I
OZ
33
V
OH
V
OL
2.4
–
–
V
V
0.4
Table 11: DC Electrical Characteristics and Operating Conditions – 512MB Module
Notes: 1, 5, 6; notes appear on page 17; V
DD
, V
DDQ
= +3.3V ±0.3V
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
NOTES
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V VIN V
DD
(All other pins not under test = 0V)
V
DD
, V
DDQ
V
IH
V
IL
3
2
3.6
V
V
V
V
DD
+ 0.3
0.8
80
22
22
33
-0.3
-80
Command and Address
Inputs, CKE
CK, S#
DQ, DQMB
I
I
μA
-20
-10
-10
20
10
10
μA
μA
μA
OUTPUT LEAKAGE CURRENT: DQ pins are disabled;
0V V
OUT
V
DDQ
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -4mA)
Output Low Voltage (I
OUT
= 4mA)
I
OZ
33
V
OH
V
OL
2.4
–
–
V
V
0.4
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