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參數(shù)資料
| 型號(hào)： | MRFIC1859 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射頻功放) |
| 中文描述： | 雙頻GSM 3.6V的集成RF功率放大器（手機(jī)3.6V的集成式射頻功放） |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 180K |
| 代理商： | MRFIC1859 |
MRFIC1859
2
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
32
31
30
29
28
27
26
25
9
10
D2G
11
D2G
12
D2G
13
14
D1B
15
B1D
16
InD
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
VSS
D2B
B2B
OutD
OutD Out D OutD
OutD
M2G
D1D
B23G
VP
Gnd
OutG
OutG
OutG
OutG
OutG
B23D
D2D
D2D
VSC
G2D
D1G
B1G
InG
PIN CONNECTIONS
Exposed Pad
(Gnd–on bottom
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage
VD1B,D2B
VD1G,D2G,
D3G,D1D,
D2D,D3D
InG, InD
6.0
V
RF Input Power
12
dBm
RF Output Power
GSM Section
DCS Section
dBm
OutG
OutD
38
36
Operating Case Temperature Range
TC
Tstg
R
θ
JC
–35 to 100
°
C
Storage Temperature Range
–55 to 150
°
C
Thermal Resistance, Junction to Case
15
°
C/W
NOTES:
1.Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the limits in the Recommended Operating
Contitions or Electrical Characteristics tables.
2.Meets Human Body Model (HBM)
≤
100 V and Machine Model (MM)
≤
60 V.
3.ESD data available upon request.
RECOMMENDED OPERATING CONDITIONS
Characteristic
Symbol
Min
Typ
Max
Unit
Supply
VD1B,D2B
VD1G,D2G,
D3G,D1D,
D2D,D3D
InG
2.8
–
5.5
V
Input Power GSM
3.0
–
10
dBm
Input Power DCS
InD
5.0
–
12
dBm
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